QCOTS™ Memories
Aeroflex Colorado Springs offers our QCOTS™ Memories (Quantified Commercial Off-the-Shelf) in 4M, 8M and 16M configurations with various packages (MCM, stacked, shielded) and radiation levels for your applications. Our latest products are the UT8SDMQ64M40/48, 2.5/3.0-Gigabit SDRAM MCM.
See the Electronic Products article on the new SDRAM.
Aeroflex Colorado Springs' UT9Q512 and the UT9Q512K32 have been replaced with the
UT9Q512E and the
UT9Q512K32E.
See the Aeroflex Customer Notification Letter dated 4-07 and 8-07 for the improvements/differences.
For questions, please call 800-645-8862.
UT8SDMQ64M40/48, 2.5/3.0-Gigabit SDRAM MCM- Organized as 64M x 40 or 64M x 48
- Single JEDEC standard 3.3V power
- LVTTL compatible with multiplexed address
- PC100-compliant
- 128-lead ceramic flatpack
- SMD pending, QML Q and Q+ pending, 100 krad(Si)
UT7Q512 QCOTS 512K 8 SRAM- 100 ns access time
- Asynchronous operation compatible with industry standard 512K x 8 SRAM
- TTL compatible inputs, output levels specified for both TTL and CMOS loads, three-state bidirectional data bus
- 5 Volt supply low operating and standby current
- 32 lead ceramic flatpack
- Available to SMD 5962-99606, QML T and Q, 30 krad(Si)
UT8Q512 QCOTS 512K 8 SRAM- 20 ns access time
- Asynchronous operation compatible with industry standard 512K x 8 SRAM
- TTL compatible inputs, output levels specified for both TTL and CMOS loads, three-state bidirectional data bus
- 3.3-Volt power supply
- 36 lead ceramic package
- Available to SMD 5962-99607, QML T and Q, 50 krad(Si)
Legacy UT9Q512 QCOTS 512K 8 SRAM- 20 ns access time
- Asynchronous operation compatible with industry standard 512K x 8 SRAM
- TTL compatible inputs, output levels specified for both TTL and CMOS loads, three-state bidirectional data bus
- 5-Volt supply low operating and standby current
- 36 lead ceramic package
- This product has reached end of life and has been replaced by the UT9Q512E
UT8Q512K32 QCOTS 16Megabit SRAM MCM- High-performance 2 M byte CMOS static RAM multi-chip module (MCM)
- 25ns access time, 3.3 volt power supply
- MCM contains four (4) 512 x 8 industry-standard asynchronous SRAM's: the control architecture allows operation as 8, 16, 24, or 32-bit data width
- TTL compatible inputs, output levels specified for both TTL and CMOS loads, three-state bidirectional data bus
- 68-lead ceramic package
- Available to SMD 5962-01533, QML T and Q, 50 krad(Si)
Legacy UT9Q512K32 QCOTS 16Megabit SRAM MCM- High-performance 2 M byte CMOS static RAM multi-chip module (MCM)
- 25ns access time, 5 volt power supply
- MCM contains four (4) 512x8 industry-standard asynchronous SRAM's: the control architecture allows operation as 8, 16, 24, or 32-bit data width
- 68-lead ceramic package
- TTL compatible inputs, output levels specified for both TTL and CMOS loads, three-state bidirectional data bus
- This product has reached end of life and has been replaced by the UT9Q51232E
UT8Q1024K8 QCOTS SRAM- 25ns access time, 3.3 volt power supply
- Dual cavity package contains two(2) 512K x 8 industry-standard asynchronous SRAMs
- TTL compatible inputs, output levels specified for both TTL and CMOS loads, three-state bidirectional data bus
- 44-lead ceramic flatpack package
- Available to SMD 5962-01532, QML T and Q, 50 krad(Si)
UT8SDSQ128M8 1G QCOTS SDRAM- Organized 128M x 8bits
- Single JEDEC standard 3.3V power supply
- 33MHz operation -40° to 85°
- LVTTL compatible with multiplexed address
- Four bank operation
- MRS cycle with address key program
- RadHard to 10 krad(Si)
- 54-lead small outline package
UT8SDMQ256M8 2G QCOTS SDRAM- Organized 256M x 8bits
- Single JEDEC standard 3.3V power supply
- 33MHz operation -40° to TBD
- LVTTL compatible with multiplexed address
- Four bank operation
- MRS cycle with address key program
- 10 krad(Si)
- 68-lead ceramic bottom brazed quad flatpack package
