Aeroflex RAD Power MOSFET Products

HiRel Power MOSFETs

Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom packaging for HiRel environments. Applications within military, aerospace, medical, nuclear power generation, high energy physics research laboratories can benefit from the use of this new series of MOSFETs.

Key attributes of the Aeroflex RAD design
for these HiRel Power MOSFETS are low power losses through a unique combination
of low RDS(on) and gate charge while also optimizing the die size for maximum current rating.

The RAD7110-Ncx die is ideal for low loss switching applications, such as DC-to-DC converters and solid-state relays (SSR) and are drop-in compatible with industry standards.

Power MOSFETs feature highlights:

100-250V Breakdown voltage
1-60A current rating
RDS_on from 10mOhms
Radiation Testing to MIL-STD-750, 100krad(Si)
SEGR/SEB immune to Xe at full drain potential
Available in die form or 7 different packaging options. Custom packaging also offered
Prototype, Electromechanical or “Class S” compliant variants

Power MOSFETs ( Breakdown Potential 100v)
Part Number	RDS_on (mOhms)	Drain Current (A)	Gate Charge (nC)	Total Dose krads(Si)	SEE *	Die Size	Package	Screening
RAD7110-NCx	220	3.5	15	100	Au, Xe	1	Bare Die	Prototype, EM, Space
RAD7110-NFx	250	3.5	15	100	Au, Xe	1	TO-39	Prototype, EM, Space
RAD7130-NCx	TBD	TBD	50	100	Au, Xe	3	Bare Die	Prototype, EM, Space
RAD7130-NNJx	TBD	TBD	50	100	Au, Xe	3	SMD 0.5	Prototype, EM, Space
RAD7130-NYx	TBD	TBD	50	100	Au, Xe	3	TO-257AA	Prototype, EM, Space
RAD7160-NCx	10	60	150	100	Au, Xe	6	Bare Die	Prototype, EM, Space
RAD7160-NNAx	13	45	150	100	Au, Xe	6	SMD 2	Prototype, EM, Space
RAD7160-NMx	18	35	150	100	Au, Xe	6	TO-254AA	Prototype, EM, Space
Power MOSFETs ( Breakdown Potential 150v)
Part Number	RDSON (mOhms)	Drain Current (A)	Gate Charge (nC)	Total Dose krads(Si)	SEE *	Die Size	Package	Screening
RAD7114-NCx	600	2.2	15	100	Au, Xe	1	Bare Die	Prototype, EM, Space
RAD7114-NFx	630	2.2	15	100	Au, Xe	1	TO-39	Prototype, EM, Space
RAD7134-NCx	TBD	TBD	50	100	Au, Xe	3	Bare Die	Prototype, EM, Space
RAD7134-NNJx	TBD	TBD	50	100	Au, Xe	3	SMD 0.5	Prototype, EM, Space
RAD7134-NYx	TBD	TBD	50	100	Au, Xe	3	TO-257AA	Prototype, EM, Space
RAD7164-NCx	24	35	150	100	Au, Xe	6	Bare Die	Prototype, EM, Space
RAD7164-NNAx	27	35	150	100	Au, Xe	6	SMD 2	Prototype, EM, Space
RAD7164-NMx	32	35	150	100	Au, Xe	6	TO-254AA	Prototype, EM, Space
Power MOSFETs ( Breakdown Potential 200v)
Part Number	RDSON (mOhms)	Drain Current (A)	Gate Charge (nC)	Total Dose krads(Si)	SEE *	Die Size	Package	Screening
RAD7210-NCx	700	2.0	15	100	Au, Xe	1	Bare Die	Prototype, EM, Space
RAD7210-NFx	730	2.0	15	100	Au, Xe	1	TO-39	Prototype, EM, Space
RAD7230-NCx	TBD	TBD	50	100	Au, Xe	3	Bare Die	Prototype, EM, Space
RAD7230-NNJx	TBD	TBD	50	100	Au, Xe	3	SMD 0.5	Prototype, EM, Space
RAD7230-NYx	TBD	TBD	50	100	Au, Xe	3	TO-257AA	Prototype, EM, Space
RAD7260-NCx	34	30	150	100	Au, Xe	6	Bare Die	Prototype, EM, Space
RAD7260-NNAx	37	30	150	100	Au, Xe	6	SMD 2	Prototype, EM, Space
RAD7260-NMx	42	30	150	100	Au, Xe	6	TO-254AA	Prototype, EM, Space
Power MOSFETs ( Breakdown Potential 250v)
Part Number	RDSON (mOhms)	Drain Current (A)	Gate Charge (nC)	Total Dose krads(Si)	SEE *	Die Size	Package	Screening
RAD7214-NCx	1200	1.5	15	100	Au, Xe	1	Bare Die	Prototype, EM, Space
RAD7214-NFx	1200	1.5	15	100	Au, Xe	1	TO-39	Prototype, EM, Space
RAD7234-NCx	200	9	50	100	Au, Xe	3	Bare Die	Prototype, EM, Space
RAD7234-NNJx	200	9	50	100	Au, Xe	3	SMD 0.5	Prototype, EM, Space
RAD7234-NYx	1200	1.2	15	100	Au, Xe	3	TO-257AA	Prototype, EM, Space
RAD7214-NQx	1200	1.2	15	100	Au, Xe	Quad	LCC-28	Prototype, EM, Space
RAD7214-NGx	1200	1.2	15	100	Au, Xe	Quad	DIP-14	Prototype, EM, Space
RAD7264-NCx	51	28	150	100	Au, Xe	6	Bare Die	Prototype, EM, Space
RAD7264-NNAx	54	28	150	100	Au, Xe	6	SMD 2	Prototype, EM, Space
RAD7264-NMx	59	28	150	100	Au, Xe	6	TO-254AA	Prototype, EM, Space
* x = P for prototypes, E for engineering samples, S for Class S.

Aeroflex RAD MOSFET Numbering
RAD	7	1	1	0	-	N	M	P	X
	TID Level	Break- down	Die Size	Breakdown Adder		Channel Type	Package	Screening	Technology
	7 - 100krad (Si)	1 - 100V 2 - 200V	1 - Size 1 3 - Size 3 6 - Size 6	0 - None 3 - 30V 4 - 50V		N - N Type P - P Type M - Mixed	C - Bare Die F - TO39 NJ - SMD 0.5 M - TO254AA Q - LCC 28 Pin G - DIP 14 Pin NA - SMD 2 Y - TO-257AA	P - Proto E - EM S - Space	Reserved
SEE	Single-Event Effects: Units exhibit immunity to SEGR and SEB at listed ion when tested at full rated drain potential and in the off-state. The following ion characteristics were used: Xe, 10MeV/n Berkeley beam. Initial LET of approximately 60MeV-cm2/mg. Au, 1.7MeV/n Brookhaven beam. Initial LET of approximately 84MeV-cm2/mg. See SEB/SEGR reports for full details.

Back

Aeroflex Microelectronic Solutions

HiRel Power MOSFETs